Infineon IRFB260NPBF N-Channel Power MOSFET: Datasheet Insights and Application Notes

The Infineon IRFB260NPBF is a robust N-Channel power MOSFET designed using advanced silicon technology to deliver high efficiency and reliability in demanding power management applications. As a key component in modern electronic systems, this MOSFET offers a compelling combination of low on-state resistance, high switching speed, and superior thermal performance, making it suitable for a wide range of industrial, automotive, and renewable energy applications.

Key Datasheet Specifications

The IRFB260NPBF is characterized by a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 46A at 25°C, which ensures robust performance in high-power circuits. Its standout feature is the exceptionally low on-state resistance (Rds(on)) of 40mΩ at 10V gate drive, minimizing conduction losses and improving overall system efficiency. The device also offers a low gate charge (Qg) of 64nC, enabling fast switching transitions and reducing driving losses in high-frequency applications. The TO-220 package provides excellent thermal conductivity, supporting effective heat dissipation through heatsinking.

Application Notes

1. Switching Power Supplies: The low Rds(on) and fast switching capabilities make this MOSFET ideal for switch-mode power supplies (SMPS), including AC-DC converters and DC-DC buck/boost regulators. It helps achieve higher power density and efficiency.

2. Motor Control Systems: In industrial motor drives and automotive systems, the IRFB260NPBF can handle high current loads while maintaining stability. Its high voltage rating suits applications like brushless DC (BLDC) motor controllers.

3. Solar Inverters: For renewable energy systems, this device efficiently manages power conversion with minimal losses, contributing to improved energy harvest in photovoltaic inverters.

4. Circuit Layout Considerations: To maximize performance, designers should minimize parasitic inductance in the drain-source loop and use a dedicated gate driver IC to ensure sharp switching edges and avoid shoot-through.

5. Thermal Management: Proper heatsinking is critical. The TO-220 package should be mounted on a heatsink with thermal paste to keep the junction temperature below the maximum rating of 175°C, ensuring long-term reliability.

Conclusion and ICGOOODFIND

The Infineon IRFB260NPBF stands out as a high-performance power MOSFET for applications requiring high voltage and current handling with low losses. Its optimized design balances efficiency, speed, and thermal properties, making it a versatile choice for power electronics designers. ICGOOODFIND: This component is highly recommended for engineers seeking a reliable solution to enhance efficiency in power conversion systems.

Keywords:

Power MOSFET, Low Rds(on), High Switching Speed, Thermal Management, TO-220 Package