Infineon BSZ024N04LS6: 30 V OptiMOS 5 Power MOSFET for High-Efficiency, Low-Voltage Applications

The relentless pursuit of higher efficiency and power density in modern electronic systems, particularly in low-voltage applications, demands semiconductors that deliver exceptional performance. Addressing this need, the Infineon BSZ024N04LS6 stands out as a premier 30 V N-channel power MOSFET from the advanced OptiMOS™ 5 technology platform. This device is engineered to set new benchmarks in reducing power losses and enhancing thermal performance, making it an ideal solution for a broad spectrum of demanding power management tasks.

A cornerstone of this MOSFET's superiority is its extremely low figure-of-merit (R DS(on) Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 2.4 mΩ at 10 V, it minimizes conduction losses significantly. This is complemented by an ultra-low gate charge (Q G), which ensures swift switching transitions and drastically reduces switching losses. The combined effect of these parameters is a device that operates at remarkably high efficiency, even under high-frequency switching conditions, which is crucial for applications where every percentage point of efficiency is critical.

The benefits of these characteristics are most evident in target applications such as:

Synchronous Rectification in Switch-Mode Power Supplies (SMPS): It is exceptionally effective in secondary-side rectification for server, telecom, and industrial power supplies, directly boosting overall system efficiency.

Motor Drive and Control Circuits: Its low R DS(on) ensures minimal voltage drop and heat generation when driving brushed DC motors or in other low-voltage motor control scenarios.

High-Current DC-DC Conversion: In point-of-load (POL) converters, battery management systems (BMS), and power tools, the MOSFET enables compact, cool-running, and highly efficient power conversion stages.

Furthermore, the BSZ024N04LS6 is housed in an SuperSO8 package, which offers a superior footprint-to-performance ratio. This package not only provides a very low parasitic inductance but also features an exposed top-side cooling pad for enhanced thermal dissipation. This allows designers to manage heat more effectively, leading to higher power density and increased system reliability.

ICGOOODFIND: The Infineon BSZ024N04LS6 OptiMOS 5 MOSFET is a top-tier component that masterfully balances ultra-low conduction and switching losses. Its exceptional efficiency and robust thermal performance, delivered in a compact package, make it an indispensable choice for designers aiming to push the boundaries of performance in low-voltage, high-current applications.

Keywords: OptiMOS 5, Low RDS(on), High-Efficiency, Power MOSFET, Synchronous Rectification.