Infineon BFR93AWH6327 Silicon RF Transistor: Key Features and Applications

The Infineon BFR93AWH6327 is a high-performance NPN silicon RF transistor designed for a wide range of high-frequency applications. As part of Infineon’s robust portfolio of RF components, this transistor is engineered to deliver exceptional gain, low noise, and reliable operation in demanding circuits.

Key Features

One of the standout characteristics of the BFR93AWH6327 is its high transition frequency (fT) of 6 GHz, which makes it suitable for amplification tasks in the VHF to microwave ranges. It offers low noise figure performance, critical for preserving signal integrity in receiver front-ends and sensitive communication equipment. The device is housed in a SOT-343 (SC-70) surface-mount package, enabling compact PCB designs and high-density board layouts. Additionally, it provides good linearity and high gain, supporting improved system efficiency and signal quality. Its silicon construction ensures cost-effectiveness and compatibility with automated assembly processes.

Applications

Thanks to its high-frequency capabilities, this transistor is widely used in low-noise amplifier (LNA) circuits in wireless communication systems such as cellular infrastructure, satellite receivers, and radio links. It is also ideal for VCOs (Voltage-Controlled Oscillators) and signal amplification in industrial, scientific, and medical (ISM) band equipment. Furthermore, the BFR93AWH6327 is commonly employed in driver stages and intermediate frequency (IF) amplification in transceivers and broadcast equipment.

ICGOOODFIND: The Infineon BFR93AWH6327 stands out as a versatile and efficient solution for RF amplification needs, combining high frequency operation, low noise, and miniaturized packaging—making it a preferred choice in modern telecommunication and electronic systems.

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Keywords: RF Transistor, Low Noise Amplifier, High Frequency, SOT-343, Silicon NPN