Infineon BSC079N03LSCG: A Comprehensive Technical Overview of the 30V OptiMOS Power MOSFET
The relentless pursuit of higher efficiency, power density, and reliability in modern electronics has made the choice of power switching components more critical than ever. Infineon Technologies, a global leader in semiconductor solutions, addresses these demands with its OptiMOS™ family. The BSC079N03LSCG stands out as a prime example, a 30V N-channel power MOSFET engineered to set new benchmarks in performance for a wide range of applications.
This device is built upon Infineon’s advanced superjunction (SJ) technology, a cornerstone of the OptiMOS™ platform. This technology enables the BSC079N03LSCG to achieve an exceptionally low on-state resistance (R DS(on)) of just 0.79 mΩ (max) at 10 V. This ultra-low resistance is the primary factor behind its superior efficiency, as it minimizes conduction losses during operation. When a MOSFET is in its on-state, power is dissipated as heat according to the formula P = I² R DS(on). By drastically reducing R DS(on), Infineon has effectively reduced the heat generated, allowing for cooler operation and higher achievable currents.
Beyond its impressive R DS(on), the BSC079N03LSCG boasts an outstanding gate charge (Q G) performance. The total gate charge is remarkably low, which translates to reduced switching losses. Driving the gate of a MOSFET requires energy; a lower Q G means the gate driver circuit can switch the transistor on and off faster and with less effort. This combination of low conduction and switching losses makes this MOSFET exceptionally efficient, particularly in high-frequency switching applications such as DC-DC converters and motor control systems.
The device is housed in an Infineon CanPAK package. This packaging technology offers significant advantages over traditional formats like the D²PAK. It features an extremely low parasitic inductance and resistance, further enhancing switching performance and efficiency. The CanPAK also provides superior thermal characteristics, thanks to its exposed top and bottom cooling surfaces. This design allows for efficient dual-sided cooling, enabling higher power dissipation and better thermal management in space-constrained designs.
Target applications for the BSC079N03LSCG are extensive and varied. It is ideally suited for:
Synchronous Rectification in switched-mode power supplies (SMPS) and server power units.
High-Current DC-DC Conversion in telecom, computing, and industrial infrastructure.
Motor Drive and Control circuits for robotics, drones, and industrial automation.
Battery Management Systems (BMS), including protection circuits and load switches.
ICGOOODFIND: The Infineon BSC079N03LSCG exemplifies the pinnacle of power MOSFET design, merging an ultra-low 0.79 mΩ R DS(on) with minimal gate charge and advanced packaging. This synergy results in a component that delivers unmatched efficiency and power density, making it an optimal choice for engineers designing next-generation power electronics that demand maximum performance and thermal management.
Keywords: OptiMOS, Low RDS(on), Power Efficiency, CanPAK, Synchronous Rectification.
