Infineon IRF7425TRPBF: High-Performance Dual N-Channel MOSFET for Power Management Applications

Release date:2025-10-31 Number of clicks:153

Infineon IRF7425TRPBF: High-Performance Dual N-Channel MOSFET for Power Management Applications

In the realm of modern electronics, efficient power management is paramount. The Infineon IRF7425TRPBF stands out as a critical component engineered to meet this demand, offering designers a robust and highly efficient solution for a wide array of power conversion and control applications. This dual N-channel MOSFET, housed in a space-saving PG-TSDSON-10 package, integrates two advanced transistors to optimize performance while minimizing board space.

A key strength of the IRF7425TRPBF lies in its exceptionally low on-state resistance (RDS(on)) of just 8.5 mΩ (max) per channel at VGS = 10 V. This ultra-low resistance is a cornerstone of its high-performance profile, as it directly translates to minimized conduction losses and improved overall system efficiency. Whether deployed in synchronous buck converters for point-of-load (POL) regulation, motor control circuits, or battery management systems, this characteristic ensures that less energy is wasted as heat, allowing for cooler operation and higher power density designs.

The MOSFET is built on Infineon's advanced OptiMOS™ technology platform, which is renowned for its superior switching performance. The device boasts a low gate charge (QG) and figures of merit that are optimized for high-frequency switching applications. This enables power supplies to operate at higher frequencies, which in turn allows for the use of smaller passive components like inductors and capacitors, reducing the overall solution size and cost without compromising performance.

Furthermore, the IRF7425TRPBF is characterized by its low thermal resistance and a wide operating temperature range, ensuring reliable operation under strenuous conditions. Its dual N-channel configuration is particularly advantageous for designing compact synchronous rectification stages, where space is at a premium. The package itself offers excellent power dissipation capabilities, making it suitable for high-current applications.

ICGOOODFIND: The Infineon IRF7425TRPBF is an exemplary power semiconductor that masterfully balances low losses, high switching speed, and robust thermal performance in a minimal footprint. It is an ideal choice for engineers aiming to push the boundaries of efficiency and power density in contemporary DC-DC conversion, motor drives, and other power management tasks.

Keywords: Power Management, Low RDS(on), OptiMOS™ Technology, High-Frequency Switching, Synchronous Rectification.

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