Infineon IPD5N25S3430: High-Performance 25V Dual N-Channel Power MOSFET

In the realm of power management and switching applications, efficiency, power density, and reliability are paramount. The Infineon IPD5N25S3430 stands out as a premier solution, engineered to meet these demanding requirements. This device is a dual N-channel power MOSFET integrated into a single, compact package, offering designers a powerful tool to optimize their circuits.

A key feature of the IPD5N25S3430 is its low on-state resistance (RDS(on)) of just 1.8 mΩ per channel (max. at VGS = 10 V). This exceptionally low resistance is critical for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. This allows systems to operate cooler and more reliably, even under high load conditions. The device is rated for a drain-source voltage (VDS) of 25V, making it an ideal choice for a wide range of low-voltage applications, including but not limited to DC-DC conversion in computing and server power supplies, motor control, and load switching.

The integration of two MOSFETs in a single space-saving PG-TSDSON-10 (5.0x6.0mm) package significantly enhances board space utilization. This is a major advantage for modern electronics where high power density is a critical design goal. The dual-chip configuration also simplifies circuit layout and can improve thermal performance by sharing a common leadframe.

Furthermore, the MOSFET is designed for high-speed switching, which is essential for increasing the frequency of switch-mode power supplies (SMPS). Higher switching frequencies enable the use of smaller passive components like inductors and capacitors, further reducing the overall system size and cost. The device’s robust design ensures it can handle significant peak current pulses, providing resilience in challenging operational environments.

ICGOOODFIND: The Infineon IPD5N25S3430 is a superior dual N-channel MOSFET that excels in delivering high efficiency, exceptional power density, and robust performance for demanding 25V applications. Its combination of ultra-low RDS(on), compact packaging, and high switching speed makes it an outstanding choice for designers aiming to push the boundaries of power management.

Keywords: Power MOSFET, Low RDS(on), High Power Density, DC-DC Conversion, Dual N-Channel.