Infineon IPD50N03S4L-06: High-Performance N-Channel MOSFET for Power Management Applications

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in modern electronics places immense demands on power management components. At the heart of many of these systems lies the MOSFET, a critical switch controlling the flow of energy. The Infineon IPD50N03S4L-06 stands out as a premier N-Channel power MOSFET engineered specifically to meet these rigorous challenges.

Fabricated using Infineon's advanced OptiMOS™ technology, this device is a benchmark for performance in low-voltage applications. Its primary strength lies in its exceptionally low on-state resistance (R DS(on)) of just 1.6 mΩ (max. at V GS = 10 V). This ultra-low resistance is pivotal, as it directly translates to minimized conduction losses and reduced heat generation during operation. The result is significantly higher efficiency, which is paramount for battery-powered devices and energy-conscious applications, leading to extended runtimes and cooler system operation.

The IPD50N03S4L-06 is characterized by its robust 30 V drain-source voltage (V DS) rating and a continuous drain current (I D) capability of 50 A. This makes it an ideal solution for a wide array of demanding roles, including:

DC-DC conversion in server, telecom, and computing power supplies.

Motor control circuits for industrial drives and automotive systems.

Load switching and power distribution in management systems.

Synchronous rectification in switch-mode power supplies (SMPS).

Beyond its electrical prowess, the component is housed in a space-saving SuperSO8 package. This innovative packaging offers the superior thermal and electrical performance of a larger D²PAK but in a footprint that is approximately 30% smaller. This allows designers to achieve higher power density, enabling more compact and slimmer end products without compromising on performance or thermal management. Furthermore, the MOSFET is 100% avalanche tested, ensuring ruggedness and reliability under extreme operating conditions, a critical factor for automotive and industrial environments.

ICGOOODFIND: The Infineon IPD50N03S4L-06 is a superior N-Channel MOSFET that masterfully combines ultra-low conduction losses, high current handling, and excellent thermal performance in a miniature package. It is an optimal choice for designers aiming to push the boundaries of efficiency and power density in modern power management applications, from computing and telecom to automotive systems.

Keywords: Low R DS(on), OptiMOS™ Technology, Power Management, High Efficiency, SuperSO8 Package.